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Norli Bokhandel

Gallium Oxide - Materials Properties, Crystal Growth, and Devices

2021, Pocket, Engelsk

929,-

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This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Produktegenskaper

  • Bidragsyter

    Masataka Higashiwaki (Redaktør) ; Shizuo Fujita (Redaktør)
  • Forlag/utgiver

    Springer Nature Switzerland AG
  • Format

    Pocket
  • Språk

    Engelsk
  • Utgivelsesår

    2021
  • Antall sider

    764
  • Serienavn

    Springer Series in Materials Science
  • Utgivelsesdato

    25.04.2021
  • Varenummer

    9783030371555

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