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Norli Bokhandel

Gallium Oxide - Materials Properties, Crystal Growth, and Devices

2020, Innbundet, Engelsk

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This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Produktegenskaper

  • Bidragsyter

    Masataka Higashiwaki (Redaktør)
  • Forlag/utgiver

    Springer Nature Switzerland AG
  • Format

    Innbundet
  • Språk

    Engelsk
  • Utgivelsesår

    2020
  • Antall sider

    764
  • Varenummer

    9783030371524

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